STMicroelectronics: Top Pick For Both Silicon And SiC Power …

The chipmaker has reported net revenues of US$16.13 billion for the full year 2022, up 26.4%. STMicroelectronics, which counts Apple ( AAPL) as one of its customers, said it expects first quarter ...

Design rules for paralleling of Silicon Carbide Power …

SiC MOSFETs (device and circuit mismatch). The conclusions will be based on real tests performed inside STMicroelectronics laboratories on the second generation of ST SiC MOSFETs featuring extremely low RDS(on) x Qg Figure-of-Merit. 2. Consequences of unideal paralleling in the application There are several possible causes for

STMicroelectronics releases SiC MOSFETs for 800 V …

STMicroelectronics has released its third generation of STPOWER silicon-carbide (SiC) MOSFETs, intended for 800 V drive systems. ST's new SiC devices are …

CoolSiC™ 1200 V SiC MOSFET

part. Furthermore, SiC MOSFETs have the benefit of being unipolar devices, and thus enable faster switching than a Si IGBT, and better controllability of switching behavior. This makes the SiC MOSFET a very attractive device. Infineon developed a truly ònormally-off ó SiC MOSFET using trench technology with the trade mark name CoolSiC™ MOSFET.

Silicon Carbide (SiC)

SiC: Silicon carbide. for a more sustainable future. STMicroelectronics introduced its first SiC diodes in 2004, after several years of research and development on silicon carbide technology. SiC MOSFETs were introduced in 2009 and entered mass production in 2014. Today, ST's portfolio of medium- and high-voltage power products based on SiC ...

An improved desaturation short-circuit protection method for SiC …

The purpose of this paper is to propose an improved desaturation protection circuit to shorten the response time of protection, and thus ensure reliable operation of SiC modules under abnormal conditions. The paper is organized as follows. In Section 2, the short-circuit behaviour of SiC MOSFET is analysed.

SiC MOSFET

Reference designs for high switching frequency SiC MOSFET operation

SiC MOSFETs

Featured Products. Higher power density with the Gen2 1200 V STPOWER SiC MOSFET in a tiny H2PAK-7 SMD package. Combining outstanding performance with package compactness, the new SCTH60N120G2-7 enables smaller and more efficient systems in high-end industrial applications. New highly versatile 650 V STPOWER SiC MOSFET in …

A trench/planar SiC MOSFET integrated with SBD (TPSBD) …

As most SiC trench MOSFETs are used in 1200 V condition, the high voltage withstanding capability of the SiC trench MOSFET integrated with the heterojunction diode needs to be further improved. A trench/planar SiC MOSFET (TPMOS) with a much smaller R on,sp owing to the additional planar MOSFET channel beneath gate trench …

Power MOSFET

Infineon is the world's largest manufacturer of power semiconductor components, offering the most comprehensive portfolio of metal-oxide-silicon transistors. With the acquisition of International Rectifier (IRF) in 2015, Infineon has continued to strengthen and expand this portfolio to include all IRF MOSFET products, as well as power MOSFETS, placing us at …

Performance and Reliability of SiC Power MOSFETs

SiC MOSFETs capable of blocking extremely high voltages (up to 15kV); while dopant control for thin highly-doped epitaxial layers has helped enable low on-resistance 900V SiC MOSFET production. Device design and processing improvements have resulted in lower MOSFET specific on-resistance for each successive device generation.

ST's 2nd-gen Silicon-Carbide MOSFETs

This webinar was broadcasted Thursday, 17th September 2020. How ST's 2nd-gen Silicon-Carbide MOSFETs take efficiency to a next level: 15 kW Power Factor Conversion reference design. Join ST's one-hour webinar and discover the key benefits of 2 nd generation STPOWER Silicon-Carbide MOSFETs specifically for a Power Factor …

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ST launches third generation of STPOWER SiC MOSFETs

News: Microelectronics 14 December 2021. ST launches third generation of STPOWER SiC MOSFETs. STMicroelectronics of Geneva, Switzerland is introducing its …

Hard Paralleling SiC MOSFET Based Power Modules

SiC MOSFETs show a very small increase in switching losses with temperature significantly reducing this effect. • SiC MOSFETs have a softer transconductance curve meaning that small changes in gate voltage, when operating in the gate threshold region, have a smaller effect on drain current than an equivalent Si IGBT.

Silicon-carbide (SiC) Power Devices | Discrete …

Silicon Carbide (SiC) devices have emerged as the most viable candidate for next-generation, low-loss semiconductors due to its low ON resistance and superior high-temperature, high-frequency, and high-voltage performance when compared to silicon. SiC also allows designers to use fewer components, further reducing design complexity. The …

Silicon Carbide (SiC) Technology Portfolio

These modules use SiC MOSFETs and SiC diodes with voltage ratings of 1200 V. View Parametric Table. Si/SiC Hybrid Modules. Si/Sic Hybrid modules contain IGBTs, silicon diodes and SiC diodes. They are used in the DC-AC stages of solar. View Parametric Table. Complete End-to-End Silicon Carbide (SiC) Supply Chain ...

25 Years of Silicon Carbide at ST and the New Era Ahead

A critical chapter in SiC's history took place in 2009 when ST sampled its first SiC MOSFET. The milestone is important because it opened the door to significant improvements in power devices. Five years later, we were manufacturing the first generation of SiC MOSFETs. Everything after that followed at a far greater rate thanks to all the ...

Power MOSFETs

Power MOSFET Applications. The ST Power MOSFET portfolio offers a broad range of breakdown voltages from -100 to 1700 V, combining state-of-the-art packaging with low gate charge and low on-resistance. Our …

Power MOSFET & SiC Devices

TOSHIBA Power MOSFET builds broad support for whole power supply applications with best-in-class technologies. Isolated DC-DC AC-DC Front End Non-Isolated DC-DC (POL) AC Input 5~12V DC Non-Isolated DC-DC (VRM) 1.xV 1.8V 48V/24V DC Bus Isolated DC-DC CPU Memory PFC Booster HVMOS DTMOSⅣ/ DTMOSⅥ V DSS =600/650V PFC …

STPOWER SiC MOSFETs

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package SCT10N120AG Automotive-grade Silicon carbide Power MOSFET 1200 …

SiC-MOSFET

Features. Junction field effect transistor (JFET) doping technology reduces both switching loss and on-resistance, achieving power loss reduction by approx. 80% * compared to the conventional silicon (Si) products. The …

Third-generation SiC MOSFETs Drive the Future of EVs and …

ST's third generation of STPOWER SiC MOSFETs have been specifically designed to meet the requirements of high-end automotive applications, including EV …

AN4671 Application note

performance from ST's 1200 V SiC MOSFET in your application. The first ST SiC MOSFET given is the 80 mΩ version (SCT30N120), the device is packaged in the proprietary HiP247™ package and features the industry's highest junction temperature rating of 200 °C. All the data reported in the present work refers to the SCT30N120.

AN4671 Application note

AN4671 Application note How to fine tune your SiC MOSFET gate driver to minimize losses L. Abbatelli, C. Brusca, G. Catalisano Introduction Power electronics today is about the …

Design Recommendations for SiC MOSFETs

SiC MOSFETs are coming into prominence in select power switching applications above ½ kV, especially in those that benefit from the high-speed capability of SiC MOSFETs. This …

T R Development of SiC-MOSFET Chip Technology

2. SiC Chip Development 2.1 Second-generation planar MOSFETs We have been developing second-generation planar metal-oxide-semiconductor field effect transistors (MOSFETs) using our newly constructed 6-inch SiC wafer line. For these planar MOSFETs, the MOS cell structure was optimized using JFET doping technology,

New Cell Topology for 4H-SiC Planar Power MOSFETs …

Dod-cell and Oct-cell MOSFETs in this work are shown in Figure1c. All MOSFETs have the same edge termination design and die size. The die size is 1.15 1.15 mm2, including the termination. The MOSFETs are fabricated on a 6-inch SiC wafer by X-Fab using the same SiC power MOSFET process. Figure1d shows the cross-sectional …

STMicroelectronics bets big on silicon carbide supplies

STM introduced SiC diodes in 2004, and today sells medium and high-voltage SiC diodes and MOSFETs to automotive, industrial, and other markets. The company …

Silicon Carbide MOSFET Discretes

650 V up to 2000 V CoolSiC™ MOSFET discretes ideally suited for hard- and resonant-switching topologies. Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC™ MOSFET portfolio ...

SiC MOSFET & Diode Roadmap

SiC MOSFET Transistor X-Section a tion [cm-3] Source (N14) # Athena simulation poly gate Doping Concentr V th adjust p-well (Al27) p-well Voltage blocking p-well (Al27) source Depth [µm] N-drain epitaxyt • Simulation-based technology development to cut cycles of learning • Flexibility of design variations for special applications

STPOWER SiC MOSFETs STSiC 1700V

The outstanding thermal properties of the SiC material, combined with the device's housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high-power density applications.

2019 Power SiC Patent Landscape with a Comparison of Planar SiC MOSFETs

Japanese integrators are leading SiC MOSFET-related patenting activity. We witnessed a remarkable acceleration in a patent filing related to SiC MOSFETs between 2011 and 2015, concomitant with the ...

STMicroelectronics presents new SiC power modules

Semiconductor company STMicroelectronics has introduced new silicon carbide (SiC) power modules. With five new module variants, OEMs are to be offered flexible options. The Hyundai Motor Group is the first customer on board. The Koreans use SiC technology in the Kia EV6, among others. The five power modules are based on the …

Totem-pole PFC reference design with SiC technology …

Silicon carbide MOSFET 650 V, 45 A TN3050H-12WY SCR Thyristor 30A 1200V 1200V 600V 600V 1200V STM32F334 VIPer26LD 97.5 % efficiency at full load Key Products: SCTW35N65G2V (SiC MOSFET) TN3050H-12GY (SCR Thyristor) STGAP2AS (Galvanic insulated gate driver) STM32F334 (32-bit MCU) VIPer26LD (converter for aux. PS)

（SiC）MOSFET:

MOSFET：55 A、1700 V、70 mOhm（,Tj = 150 C）,N,HiP247 SCT012H90G3AG Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package