- +8618437960706
- دوشنبه تا شنبه: 10:00 - 16:00 / یکشنبه تعطیل است
Infineon CoolSiC SiC MOSFETs are built on a state-of-the art trench concept that sets a benchmark. This allows for both lowest losses in the application and highest reliability in operation. The temperature-independent low switching losses and a fast, internal free-wheeling diode rated for hard commutation make the CoolSiC MOSFETs in …
به خواندن ادامه دهید
Infineon's CoolSiC™ MOSFET 1200 V M1H portfolio includes TO247-3 and TO247-4 discrete packages with new ultra-low on-resistances of 7 mΩ, 14 mΩ and 20 mΩ. They are easy to design-in, especially due to the gate voltage overshoots and undershoots with the new maximum gate-source voltage down to -10 V.
به خواندن ادامه دهید
Advances in SiC MOSFETs are redefining the abilities of electric motors. Learn the advantages of SiC MOSFETs vs. IGBTs for motor drive applications today. ... Infineon Technologies AG. MOSFETs. Infineon's EasyPACK™ Module with CoolSiC™ Trench MOSFET and PressFIT/NTC 4 years ago. WOLFSPEED, INC. Silicon Carbide. …
به خواندن ادامه دهید
The Infineon power MOSFET product portfolio is extensive with a wide selection of power MOSFETS and MOSFET discretes, including 4 pin MOSFETs (MOSFET 4) discretes. …
به خواندن ادامه دهید
part. Furthermore, SiC MOSFETs have the benefit of being unipolar devices, and thus enable faster switching than a Si IGBT, and better controllability of switching behavior. This makes the SiC MOSFET a very attractive device. Infineon developed a truly ònormally-off ó SiC MOSFET using trench technology with the trade mark name CoolSiC™ MOSFET.
به خواندن ادامه دهید
May 08, 2019 by Scott McMahan Infineon Technologies AG entered high-volume production of a comprehensive portfolio of 1200V CoolSiC™ MOSFET devices. …
به خواندن ادامه دهید
The production ramp of the silicon carbide (SiC) MOSFET base technology has been safely completed, Infineon is now bringing the most comprehensive discrete SiC portfolio for industrial applications to …
به خواندن ادامه دهید
SiC MOSFETs are similar to Si MOSFETs with respect to the device type. However, SiC is a WBG material with properties that allow these devices to operate at the same high power levels as IGBTs while still being able to switch at high frequencies. These properties translate into system benefits
به خواندن ادامه دهید
Published: | Updated: . Infineon Silicon Carbide CoolSiC™ MOSFETs & Diodes provides a portfolio that addresses the need for smarter, …
به خواندن ادامه دهید
Around 4-5 years ago, SiC MOSFETs or GaN HEMTs in the 650V range would cost about 4 -5 times the price of a similar voltage, current, and R DSON-rated Si SJ MOSFET. WBG device prices have dropped over the last few years as wider adoption leads to efficiencies from volume production and greater competition.
به خواندن ادامه دهید
CoolSiC™ MOSFET products in 2000 V, 1700 V, 1200 V, and 650 V target photovoltaic inverters, battery charging, energy storage, motor drives, UPS, auxiliary power supplies, …
به خواندن ادامه دهید
Silicon Carbide (SiC) MOSFETs offer high efficiency and reliability for automotive applications. Infineon's extensive range of automotive SiC MOSFETs, include Silicon …
به خواندن ادامه دهید
Our innovative and revolutionary technology implements high-performance wide band gap semiconductor materials and includes Infineon's CoolSiC™. Moreover, our CoolGaN™ solutions in both discrete and integrated power stages. CoolSiC™ - revolution to rely on in high voltage segments. Silicon carbide (SiC) has a wide bandgap of 3 ...
به خواندن ادامه دهید
Additionally, for all variants a low on-resistance, stable and reproducible even in mass production, is achieved. Guaranteed at driving voltage levels of only V. CoolSiC™ is synonymous with pioneering in trench SiC MOSFET technology. Infineon once again demonstrates that we continue to strive for innovation and technology leadership – also ...
به خواندن ادامه دهید
Figure 3: Short-circuit testing of a 1200 V, 80 mΩ SiC MOSFET at a dc link of 600 V and VGS = 20 V, indicating a withstand time of at least 5 μs. ... ST Microelectronics, and Microsemi; the community can expect offerings soon from Littelfuse and Infineon. Figure 5: Status of SiC MOSFET development activities by various …
به خواندن ادامه دهید
(left) of a SiC MOSFET O ne o f the m o st im por ta nt acce p tanc e cr iteria i s the reliability of th e device under th e operating condi tions o f its ta rge t a p plications. The m a jor d ifference to the e stablish e d silicon device world is the ... Figure 4 Sketch of the CoolSiC MOSFET cell structure w w w .infineon.com 4 01-2020.
به خواندن ادامه دهید
When aiming to achieve maximum system benefits by using SiC MOSFETs it is advisable to complement Infineon's CoolSiC™ MOSFETs with Infineon's EiceDRIVER™ gate-driver ICs to fully leverage the advantage of the SiC-technology. Improved efficiency, space and weight savings, part count reduction, and enhanced system reliability will be …
به خواندن ادامه دهید
SiC 2 07-2020 Table of Contents 1 3 2 SiC ？ 4 3 SiC MOSFET – 5 3.1 SiC MOSFET 5
به خواندن ادامه دهید
The CoolSiC 650 V high-performance trench-based power SiC MOSFETs are offered in a very granular portfolio to best suit different target applications. The new family comes in a JEDEC-qualified TOLL package featuring a low parasitic inductance, allowing for higher switching frequency, reduced switching losses, good thermal management, and ...
به خواندن ادامه دهید
Our selection of CoolSiC™ Silicon Carbide MOSFET power modules are available in different configurations such as 3-level, half-bridge, fourpack, sixpack, or as booster, the …
به خواندن ادامه دهید
The Evaluation Board EVAL-1EDC20H12AH-SIC is intended to evaluate the Infineon EiceDRIVER ™ 1EDC20H12AH or 1EDI20H12AH together with the Infineon SiC MOSFET IMZ120R045M1 in an application circuit to understand the features and performance of both devices. The board contains two gate drivers to drive two SiC MOSFET switches in half …
به خواندن ادامه دهید
The low-ohmic superjunction (SJ) MOSFET (SJ2) is continuously conducting. During the magnetizing phase the SiC MOSFET (SiC2) is turned on and operates as in a standard PFC, which is necessary in order to magnetize the PFC choke. After SiC2 is turned off, the body diode of SiC1 is conducting and finally actively turning on SiC1, and
به خواندن ادامه دهید
Infineon is the world's largest manufacturer of power semiconductor components, offering the most comprehensive portfolio of metal-oxide-silicon transistors. With the acquisition of International Rectifier (IRF) in 2015, Infineon has continued to strengthen and expand this portfolio to include all IRF MOSFET products, as well as power MOSFETS, placing us at …
به خواندن ادامه دهید
The recently launched 1200 V CoolSiC™ MOSFET M1H comes with a variety of new features and . improvements from which the targeted applications will benefit. One highlight is the much improved . stability of the threshold voltage under real application conditions. By André Lenze and Dr. Paul Salmen, Infineon Technologies. Wide Bandgap
به خواندن ادامه دهید
Infineon Technologies AG entered high-volume production of a comprehensive portfolio of 1200V CoolSiC™ MOSFET devices. They are rated from 30mΩ to 350mΩ and implemented in TO247-3, TO247-4, and TO247-2 housings. The expansion also includes a 650V CoolSiC MOSFET product family, and a surface mount device …
به خواندن ادامه دهید
3 Gate-oxide reliability of industrial SiC MOSFETs – FIT rates and lifetime . 3.1 Introduction to gate oxide reliability for SiC MOSFETs . High numbers of early gate-oxide failures have hampered the commercialization of SiC MOSFETs for many years, and provoked skepticism whether SiC MOS switches would ever be as reliable as their Si counterparts.
به خواندن ادامه دهید
(12-300V) Si high voltage power (500-950V) SiC MOSFET GaN MOSFET Automotive Si low voltage power (12-300V) OptiMOS™ and StrongIRFET™ low and medium voltage …
به خواندن ادامه دهید
The head of Infineon's silicon-carbide business said some customers don't want to talk about silicon at all anymore.
به خواندن ادامه دهید
SiC MOSFET technology background › In 4H-SiC, high defect density in the interface of SiC –SiO 2-e-e- e-e e- e- e- e-e-e- e- e-R K 1 R K2 R n+ R Kanal R n+ Metal SiC (p-doped) SiC (n-doped) Silicon dioxide +V G +V DS › Scattering of electrons in MOSFET channel→Reduction of electron channel mobility
به خواندن ادامه دهید
MOSFETs", PCIM Europe 2019, Nuremberg, Germany, May 2018 [2] T. Basler et al, "Practical Aspects and Body Diode Robustness of a 1200 V SiC Trench MOSFET", PCIM Europe 2018, Nuremberg, Germany, June 2018 [3] Infineon AN-2006-01: "Driving IGBTs with unipolar gate voltage", Application Note, December 2005
به خواندن ادامه دهید
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) have been meanwhile commonly accepted to be the concept of choice when aiming at reliable SiC …
به خواندن ادامه دهید
E-Series Automotive-Qualified Silicon Carbide MOSFETs. 650 V Discrete Silicon Carbide MOSFETs. 900 V Discrete Silicon Carbide MOSFETs. 1000 V Discrete Silicon Carbide MOSFETs. 1200 V Discrete Silicon Carbide MOSFETs. 1700 V Discrete Silicon Carbide MOSFETs. E-Series Automotive-Qualified Silicon Carbide MOSFETs.
به خواندن ادامه دهید
<> AN2017-04 Advanced Gate Drive Options for Silicon-Carbide (SiC) MOSFETs using EiceDRIVER™ About this document Scope and purpose This application note discusses the basic parameters of silicon-carbide (SiC) MOSFETs and derives gate drive requirements. The document considers the following EiceDRIVER™ …
به خواندن ادامه دهید
Six dedicated gate driver ICs have been developed in order to optimally drive and protect Infineon's CoolSiC™ MOSFET 650 V devices to achieve the optimum combination of …
به خواندن ادامه دهید
1200-V SiC T-MOSFETIGBT,。. ANPC,、1500-V。. Easy3B 48kHz,200kW ...
به خواندن ادامه دهید